Dr. Kobayashi joined the Center for Nanostructures at Santa Clara University as a research consultant in 2004. Currently, he is also affiliated with Quantum Science Research at Hewlett-Packard Laboratories (Palo Alto, California) as a visiting scholar and Electronics Research Laboratory at the University of California Berkeley (Berkeley, California) as a research associate. At Hewlett-Packard Laboratories, he is developing core structures and materials for a new class of nano-meter scale electrical switches/memories for future computing systems while, at UC Berkeley, he is involved in research on optoelectronics and biosensing applications based on nanostructures of group III-V compound semiconductors. Prior to his current appointments, Dr. Kobayashi worked at the Center for Micro and Nano Technology at Lawrence Livermore National Laboratory (Livermore, California) from 2002 to 2004 as a scientist, developing semiconductor materials used in both ultra-high speed diagnosis systems for the National Ignition Facility and optoelectronic components for the Optical Code Division Multiple Access (DARPA funded project). From 1999 to 2001, Dr. Kobayashi was at Agilent Technologies, Inc. (Palo Alto, California), involved in developing III-V compound semiconductor materials for superior optoelectronic and electronic components, such as LEDs, VCSELs, and hetero-bipolar transistors, for both high-speed fiber-optics and wireless communications. Before coming to the U.S. in 1992, Dr. Kobayashi worked for HONDA R&D Co. Ltd. (Saitama, Japan) and Toshiba Co. (Yokohama, Japan), developing III-V compound semiconductors and amorphous semiconductors for solar cells, photodetectors, and MOS transistors. He earned his B.S. degree in Electrical Engineering from Aoyama Gakuin University (Tokyo, Japan), M.S. and Ph.D. degrees in Material Science from the University of Southern California in 1998.