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Morusupalli, Rao

Adjunct Professor

School of Engineering


Ph.D., Materials Science and Engineering
M.S., Materials Science and Engineering
B.S., Electrical Engineering

Research Areas

  • Semiconductors, Thin Films, Materials and Interfaces, Device Physics
  • Magnetism in Electronic Materials, Search for Magnetic Monopoles
  • Integrated Circuit Fabrication Technology, Reliability
  • Design for Reliability, Electromigration in Metals
  • Theoretical and Numerical Modeling, Atomistic modeling, Applied Statistics
  • Machine Learning and AI (Property Prediction, Structure property relationship)
  • AI assisted Microstructure analysis (Phases, Defects, Performance)

Courses Taught

  • ENGR 1
  • ENGR 1L


  • Materials Research Society (MRS)
  • American Institute of Physics (AIP)
  • Institute of Electrical and Electronics Engineers (IEEE)
  • American Physical Society (APS)
  • American Society for Engineering Education (ASEE)
  • The American Radio Relay League (ARRL)
  • Leave No Trace Organization (LNT)
  • Stanford Professionals in Energy
  • Alumnus, School of Engineering, Stanford University
  • Stanford University Alumni Association (SAA)

Book Chapters

  • Cambridge University Press, 9781107408982, Materials, Technology and Reliability for Advanced Interconnects 2005

Selected Publications

  • Morusupalli, R., Nix, W., & Patel, J. (2007). Comparison of Line stress predictions with measured electromigration failure times. In 2007 IEEE International Integrated Reliability Workshop Final Report (pp. 124–127).

  • Morusupalli, R., et al. (2009). Addressing IC component Quality and Reliability assurance challenges. In 2009 IEEE International Reliability Physics Symposium (pp. 810–813).

  • Morusupalli, R. (2010). Plastic Relaxation during Thermal Loading in Advanced Cu Interconnects at Intermediate Temperatures: Implications for Stress-induced Voiding (SIV) in Advanced Interconnect Nodes. In Advanced Metallization Conference 2010 (pp. 51–53).

  • Budiman, A., Morusupalli, R., Lee, T.K., Shen, Y.L., Hwang, S.H., Kim, B.J., Son, H.Y., Suh, M.S., Chung, Q.H., Byun, K.Y., & others (2011). Plasticity and Reliability: From Unexpected Plasticity-Induced Damages in Advanced Cu Interconnects to Novel Reliability Phenomena in 3-D Interconnect Schemes Using Through-Silicon Vias(TSV) Technology. Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Feb.

  • Morusupalli, R., Rao, R., Lee, T.K., Shen, Y.L., Kunz, M., Tamura, N., & Budiman, A. (2012). Critical temperature shift for Stress Induced Voiding in advanced Cu interconnects for 32 nm and beyond. In 2012 IEEE International Reliability Physics Symposium (IRPS) (pp. EM–8).

  • Tian, T., Morusupalli, R., Shin, H., Son, H.Y., Byun, K.Y., Joo, Y.C., Caramto, R., Smith, L., Shen, Y., Kunz, M., & others (2016). On the mechanical stresses of cu through-silicon via (tsv) samples fabricated by sk hynix vs. sematech–enabling robust and reliable 3-d interconnect/integrated circuit (ic) technology. Procedia Engineering, 139, 101–111.

  • Morusupalli, R., Littlefield, D., & Nix, W. (2021). Impact of Lorentz Force on Atomic Flux During Electromigration. In 2021 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–4).

  • Morusupalli, R., "From Early Discoveries to a New Hypothesis - A Brief History of Atomic Magnetism and Magnetic Monopoles," 2023 8th IEEE History of Electrotechnology Conference (HISTELCON), Florence, Italy, 2023, pp. 11-15, doi: 10.1109/HISTELCON56357.2023.10365814.

Google Scholar Link


Adjunct Professor
School of Engineering