Adjunct Professor
School of Engineering
Education
Ph.D., Materials Science and Engineering
M.S., Materials Science and Engineering
B.S., Electrical Engineering
Research Areas
- Semiconductors, Thin Films, Materials and Interfaces, Device Physics
- Magnetism in Electronic Materials, Search for Magnetic Monopoles
- Integrated Circuit Fabrication Technology, Reliability
- Design for Reliability, Electromigration in Metals
- Theoretical and Numerical Modeling, Atomistic modeling, Applied Statistics
- Machine Learning and AI (Property Prediction, Structure property relationship)
- AI assisted Microstructure analysis (Phases, Defects, Performance)
Courses Taught
- ENGR 1
- ENGR 1L
Affiliations
- Materials Research Society (MRS)
- American Institute of Physics (AIP)
- Institute of Electrical and Electronics Engineers (IEEE)
- American Physical Society (APS)
- American Society for Engineering Education (ASEE)
- The American Radio Relay League (ARRL)
- Leave No Trace Organization (LNT)
- Stanford Professionals in Energy
- Alumnus, School of Engineering, Stanford University
- Stanford University Alumni Association (SAA)
Book Chapters
- Cambridge University Press, 9781107408982, Materials, Technology and Reliability for Advanced Interconnects 2005
Selected Publications
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Morusupalli, R., Nix, W., & Patel, J. (2007). Comparison of Line stress predictions with measured electromigration failure times. In 2007 IEEE International Integrated Reliability Workshop Final Report (pp. 124–127).
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Morusupalli, R., et al. (2009). Addressing IC component Quality and Reliability assurance challenges. In 2009 IEEE International Reliability Physics Symposium (pp. 810–813).
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Morusupalli, R. (2010). Plastic Relaxation during Thermal Loading in Advanced Cu Interconnects at Intermediate Temperatures: Implications for Stress-induced Voiding (SIV) in Advanced Interconnect Nodes. In Advanced Metallization Conference 2010 (pp. 51–53).
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Budiman, A., Morusupalli, R., Lee, T.K., Shen, Y.L., Hwang, S.H., Kim, B.J., Son, H.Y., Suh, M.S., Chung, Q.H., Byun, K.Y., & others (2011). Plasticity and Reliability: From Unexpected Plasticity-Induced Damages in Advanced Cu Interconnects to Novel Reliability Phenomena in 3-D Interconnect Schemes Using Through-Silicon Vias(TSV) Technology. Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Feb.
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Morusupalli, R., Rao, R., Lee, T.K., Shen, Y.L., Kunz, M., Tamura, N., & Budiman, A. (2012). Critical temperature shift for Stress Induced Voiding in advanced Cu interconnects for 32 nm and beyond. In 2012 IEEE International Reliability Physics Symposium (IRPS) (pp. EM–8).
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Tian, T., Morusupalli, R., Shin, H., Son, H.Y., Byun, K.Y., Joo, Y.C., Caramto, R., Smith, L., Shen, Y., Kunz, M., & others (2016). On the mechanical stresses of cu through-silicon via (tsv) samples fabricated by sk hynix vs. sematech–enabling robust and reliable 3-d interconnect/integrated circuit (ic) technology. Procedia Engineering, 139, 101–111.
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Morusupalli, R., Littlefield, D., & Nix, W. (2021). Impact of Lorentz Force on Atomic Flux During Electromigration. In 2021 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–4).
- Morusupalli, R., "From Early Discoveries to a New Hypothesis - A Brief History of Atomic Magnetism and Magnetic Monopoles," 2023 8th IEEE History of Electrotechnology Conference (HISTELCON), Florence, Italy, 2023, pp. 11-15, doi: 10.1109/HISTELCON56357.2023.10365814.
